GaN and SiC semiconductor compounds: materials for emerging micro- and optoelectronics
Wide-gap semiconductor compounds GaN and SiC are considered nowadays as principal materials for new semiconductor devices. Their structural and electrical properties are still under investigation. The aim of this thesis will be an application of ion beam analysis (RBS/channeling) and X?ray diffraction techniques (XRD) for elucidation of mechanisms of defect formation and their transformations in ion implanted GaN and SiC single crystals. Multilayer epitaxial heterostructures (quantum wells and superlattices) will also be studied. For data evaluation novel computer codes based principally on the Monte Carlo method have to be developed. This research will be carried out with the close collaboration with outstanding foreign laboratories, primarily in France and Germany.
This kind of interdisciplinary research is located in the main stream of modern materials science. It requires from the candidate ability in carrying out experiments, computer programing and basic knowledge of the nuclear and solid state physics.
More information: Professor Andrzej Turos
SINS Nuclear Reaction Department
00-681 Warszawa, Hoża 69
tel. (++4822) 5532129
turos@fuw.edu.pl